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Research Associate (Gallium Nitride Epitaxy for Nanodevices)

Cardiff University

Location:	Cardiff
Salary:	£32,548 to £38,833 per annum (Grade 6)
Hours:	Full Time
Contract Type:	Fixed-Term/Contract

Placed On:	15th August 2018
Closes:	20th August 2018
Job Ref:	7616BR

As part of a major investment programme in compound semiconductor science and technology, Cardiff University seeks a talented, motivated postdoctoral researcher with practical expertise in gallium nitride-based (III-N) Molecular Beam Epitaxy (MBE) to join the Institute for Compound Semiconductors (ICS), supported by funding from the Sêr Cymru Chair in Advanced Engineering and Materials.

The Research Programme

The envisioned research targets micro- and nano-structured Molecular Beam Epitaxy (MBE) methods for III-N devices associated with the ICS, Sêr Cymru Research Group and the Compound Semiconductor Centre. Collaborative projects may include development of quantum dots/nanowires/superlattices with applications in quantum emitters, III-N photonics and energy-related applications.  The post will also seek an innovative and dynamic approach to industrial partnerships with the IQE, Ltd, the Compound Semiconductor Centre and the EPSRC-funded Manufacturing HUB.

The ICS and Sêr Cymru research group form part of > £300m investment in new research and innovation centres, and its potential is already recognised by the Welsh and UK governments, who have invested over £29m towards its creation.  The ICS will be a unique facility in Europe, equipped with epitaxy, state-of-the art fabrication and device characterisation facilities.  Stimulated by demand for creative and professional prototyping service, the ICS provides an environment to grow academic research and industrial projects.

Candidates will have a PhD in Engineering, Physics or closely-related subject focusing on advanced MBE III-N materials with emphasis on device application. Hands-on experience in epitaxy of III-N compounds is absolutely essential. Expertise in nanoscale, photonic or quantum applications is highly desirable.  Additional skills associated with materials characterization, fabrication or devices are also desired.  You will have a strong research record demonstrated through publications in high quality academic journals; experience participating in research proposals and research/industry-based groups with proven ability to network effectively with academics and outside academia.

More information about the Ser Cymru research group can be found here (website still under development and only shows a several of the staff and projects):

https://www.cardiff.ac.uk/research/explore/research-units/compound-semiconductors-ser-cymru-research-group

More information about the Institute for Compound Semiconductors can be found here:

https://www.cardiff.ac.uk/institute-compound-semiconductors

This post is full time (35 hours a week) and is available immediately and fixed-term for 2 years.

Please submit with your completed application and your full CV.  We also require a statement of research interests and career goals (2 pages max).

For any informal enquiries about the role and the School of Engineering, please contact Professor Diana Huffaker HuffakerDL@cardiff.ac.uk.

For further details, about the working in Cardiff University, please contact Enginadmin@cardiff.ac.uk

The School of Engineering holds an Athena SWAN Bronze Award that recognises good employment practice and a commitment to develop the careers of women working in science. Cardiff University is an equal opportunities employer and positively encourages applications from suitably qualified and eligible candidates regardless of sex, race, disability, age, sexual orientation, gender reassignment, religion or belief, marital status, or pregnancy and maternity. For this vacancy we actively encourage women. We will also consider proposals for flexible working or job share opportunities.

Please be aware that Cardiff University reserves the right to close this vacancy early should sufficient applications be received.

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